TOKYO, Japan, June 21, 2012 — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the availability of three new super-junction metal-oxide-semiconductor field-effect-transistors (Super Junction MOSFETs) (Note 1) featuring figure of merit: on-state resistance x gate change in a 600 V power semiconductor device suitable for high-speed motor drives, DC-DC converters, and DC-AC inverter applications. This industry-leading low on-state resistance and low gate charge combination benchmark, combined with the fast body diode feature, allow the new RJL60S5DPP, RJL60S5DPK and RJL60S5DPE devices to contribute to improved power efficiency in home appliance motor drives, such as for air conditioners, that employ high-speed motors with inverterized control.
In recent years, greater environmental awareness has led efforts to increase the energy efficiency of electronic devices and reduce our energy footprint. In particular, there has been a strong emphasis on reducing loss and improving power efficiency in the power supply circuits of home appliances such as air conditioners and TVs. This has spurred demand for lower loss (which is a function of lower on-state resistance and better switching characteristics) in the power devices used in such products, to improve overall energy efficiency.
Previously, air conditioners and other home appliances employing high-voltage, high-speed motors and inverters typically used IGBTs with discrete Fast Recovery Diodes (FRDs), in one package, to enable a short reverse recovery time (trr). Now, the need for even higher switching speeds, coupled with the need for even lower loss with stable operation and performance is generating demand for Super Junction MOSFETs with fast recovery body diode characteristics. Unlike a conventional planar structure, the Super Junction MOSFETs enable a decrease of the on-resistance without reducing the voltage tolerance of the device, making it possible to produce MOSFETs with a lower on-resistance per unit of area. To meet the growing need for these devices as the industry moves toward a more energy-conscious perspective, Renesas has leveraged its accumulated expertise in power device technology to develop a family of new high-performance Super Junction MOSFETs with high-speed body diodes, for low loss and improved high-speed switching performance.
Renesas continues to support customers by supplying total signal chain solutions, combining microcontrollers (MCUs) with analog and power devices, and looks forward to increasing its standing as a leading global supplier of power semiconductor devices. Renesas considers this new series of high-precision Super Junction MOSFET devices as the core of its high-voltage power device lineup, intending to further strengthen its array of products. Renesas will also expand its range of kit solutions for motor and inverter applications, combining the new Super Junction MOSFET devices with Renesas’ RL78 family of low-power MCUs or the RX family of mid-range MCUs, as well as photocouplers for driving power semiconductor devices. Reference boards incorporating the new Super Junction MOSFET devices are also scheduled to be prepared to provide support for customers with kit evaluation and product design.
The Super Junction MOSFET devices are available in configurations equivalent to the following industry-standard packages: TO-220FP (RJL60S5DPP), TO-3P (RJL60S5DPK), and LDPAK (RJL60S5DPE).
Samples of Renesas Electronics' new RJL60S5DPP, RJL60S5DPK, and RJL60S5DPE SJ- MOSFETs will be available in September 2012, priced at US$2.0 per unit. Mass production is scheduled to begin December 2012 and is expected to reach a combined volume of 500,000 units per month for all three products by March 2013. (Pricing and availability are subject to change without notice.)
Refer to the separate sheet for the main specifications of the new products.
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Renesas Electronics Corporation (TSE: 6723), the world's number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices. Business operations began as Renesas Electronics in April 2010 through the integration of NEC Electronics Corporation (TSE:6723) and Renesas Technology Corp., with operations spanning research, development, design and manufacturing for a wide range of applications. Headquartered in Japan, Renesas Electronics has subsidiaries in 20 countries worldwide. More information can be found at www.renesas.com.
The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.